Conductivity and mobility in n-InP at very low temperatures: new arguments for a sharp M-I transition

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Abstract
The metal-insulator transition, in just metallic and compensated n-type indium phosphide, has been induced by a magnetic field, and some features of the transition predicted by Mott, such as minimum metallic conductivity, have been observed. Corrections to the conductivity due to Coulomb interactions are described and some agreement with scaling theories of the transition is found. On the insulating side of the transition, the conductivity is dominated by hopping mechanisms and its temperature dependence is explained by the opening of a Coulomb gap in the impurity band, due to e-e interactions. Nevertheless the mean results are obtained with the study of the mobility in high magnetic fields down to the lowest temperatures; they show that the agreement with scaling theories seems fortuitous, i.e. the zero temperature conductivity drops discontinuously to zero when the Anderson transition has been achieved.

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