Chemical Bonding of Fluorine Atoms in Siof Alloys: Microscopic Mechanisms for Reductions in the Dielectric Constant Relative to SiO2

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1 January 1996

journal article
Published by Springer Nature in MRS Proceedings

Vol. 443
https://doi.org/10.1557/proc-443-111

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Preparation of Low-Dielectric-Constant F-Doped SiO₂ Films by Plasma-Enhanced Chemical Vapor Deposition
Japanese Journal of Applied Physics, 1996
Local bonding environments of Si–OH groups in SiO2 deposited by remote plasma-enhanced chemical vapor deposition and incorporated by postdeposition exposure to water vapor
Journal of Vacuum Science & Technology A, 1990