BP‐Stabilized n‐Si and n ‐ GaAs Photoanodes
- 1 October 1983
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 130 (10) , 1999-2002
- https://doi.org/10.1149/1.2119509
Abstract
Thin boron phosphide overlayers, employed as transparent conductive windows, have been deposited on n‐Si and photoanodes. Significantly enhanced stabilities are observed in ferro‐ferricyanide electrolytes. Spectral response and I–V data for aging experiments, as well as a discussion of the energy level diagrams for the heterojunctions, are presented.Keywords
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