Growth of cubic (zinc blende) CdSe by molecular beam epitaxy
- 26 June 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (26) , 2680-2682
- https://doi.org/10.1063/1.101033
Abstract
We report the growth of cubic (zinc blende) CdSe epilayers on [100] GaAs substrates by molecular beam epitaxy. The lattice constant of the CdSe epilayers is 6.077 Å, and the energy gap is 1.75, 1.74, and 1.67 at 10, 80, and 300 K, respectively.Keywords
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