Interatomic Potentials for Silicon Structural Energies
- 4 November 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 55 (19) , 2001-2004
- https://doi.org/10.1103/physrevlett.55.2001
Abstract
We develop two- and three-body classical interatomic potentials that model structural energies for silicon. These potentials provide a global fit to a data base of first-principles calculations of the energy for bulk and surface silicon structures which spans a wide range of atomic coordinations and bonding geometries. This is accomplished by use of a new "separable" form for the three-body potential that reduces the three-body energy to a product of two-body sums and leads to computations of the energy and atomic forces in steps as opposed to for a general three-body potential.
Keywords
This publication has 11 references indexed in Scilit:
- Predictions for the pressure and temperature phase transitions of silicon using a semiempirical potentialScripta Metallurgica, 1985
- Computer simulation of local order in condensed phases of siliconPhysical Review B, 1985
- Computer modeling of Si and SiC surfaces and surface processes relevant to crystal growth from the vaporJournal of Crystal Growth, 1984
- Structural and electronic properties of the high-pressure hexagonal phases of SiPhysical Review B, 1984
- Transition from-tin to simple hexagonal silicon under pressurePhysical Review B, 1984
- Theory of static structural properties, crystal stability, and phase transformations: Application to Si and GePhysical Review B, 1982
- Microscopic Theory of the Phase Transformation and Lattice Dynamics of SiPhysical Review Letters, 1980
- Anab initiopair potential applied to metalsPhilosophical Magazine A, 1980
- Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond StructurePhysical Review B, 1966
- Interaction of the van der Waals Type Between Three AtomsThe Journal of Chemical Physics, 1943