TdI10: Ferroelectric thin films in integrated microelectronic devices
- 1 August 1992
- journal article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 133 (1) , 47-60
- https://doi.org/10.1080/00150199208217976
Abstract
We present results on four integrated ferroelectric projects: 1) An integrated barium strontium titanate thin-film on GaAs MMIC (monolithic microwave integrated circuit) with dielectric constant of 450 and loss tangent of 10−3 at 2.2 GHz operation, done as a Symetrix/Matsushita Electronics Corp. joint development; 2) A low-density (1 Kb) ferroelectric RAM (random access memory) done with PZT (lead zirconate titanate) and other ferroelectrics on CMOS (complementary metal oxide semiconductor) Si, carried out as a joint development with Olympus Optical Co.; 3) A liquid-source CVD (chemical vapor deposition) machine and its deposition of strontium titanate and barium strontium titanate films of exceptionally low d.c. leakage current (1 nA/cm2 at 120 nm thickness and 3V operation) for DRAM (dynamic RAM) applications; and 4) performance parameters of a properietary material for RAM application which is totally fatigue-free up to at least 5 × 1011 cycles.Keywords
This publication has 3 references indexed in Scilit:
- Barrier layers for realization of high capacitance density in SrTiO3 thin-film capacitor on siliconApplied Physics Letters, 1990
- Ferroelectric MemoriesScience, 1989
- An experimental 512-bit nonvolatile memory with ferroelectric storage cellIEEE Journal of Solid-State Circuits, 1988