Behavior of a ‐ SiN : H and a ‐ SiON : H Films in Condensed Water
- 1 November 1992
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 139 (11) , 3346-3351
- https://doi.org/10.1149/1.2069076
Abstract
The etch rates of plasma‐deposited silicon nitride and silicon oxynitride films in condensed water were studied as a function of water temperature, pH of the solution, and film composition. The etch rates for all films at water temperatures between 50 and 125°C were between 0.2 and 10.0 nm/h. The activation energies were between 0.6 and 1.0 eV. Where water condensation on devices is possible, water etching of the passivation should be considered as a potential failure mode.Keywords
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