High-efficiency avalanche-resonance pumped amplification
- 6 February 1969
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 5 (3) , 43-45
- https://doi.org/10.1049/el:19690029
Abstract
Microwave amplification has been obtained from silicon diodes operated in avalanche-resonance pumped modes. D.C.-r.f. conversion efficiencies were 25% at 1.3GHz for a saturation gain of 12dB and a bandwidth of 3%.Keywords
This publication has 0 references indexed in Scilit: