Depth distributions of low-energy 4He implanted in solids
- 1 April 1986
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 15 (1-6) , 49-53
- https://doi.org/10.1016/0168-583x(86)90250-8
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Analysis of solids by secondary ion and sputtered neutral mass spectrometryApplied Physics A, 1985
- Depth distributions of 1H, 2H, and 4He implanted into HgCdTe and CdTe measured by secondary ion mass spectrometryApplied Physics Letters, 1984
- He wall bombardment and wall erosion in fusion devicesRadiation Effects, 1983
- Introductory remarks — helium in metalsRadiation Effects, 1983
- Depth distributions and range parameters for He implanted in Si and GaAsApplied Physics Letters, 1982
- Range profiles and thermal release of helium implanted into various metalsJournal of Nuclear Materials, 1979
- Depth profiling of light elements in materials with high-energy ion beamsJournal of Vacuum Science and Technology, 1977
- An accurate and sensitive method for the determination of the depth distribution of light elements in heavy materialsJournal of Applied Physics, 1976
- Implantation profiles of low-energy helium in niobium and the blistering mechanismApplied Physics Letters, 1975
- Depth distribution of implanted helium and other low-z elements in metal films using proton backscatteringApplied Physics Letters, 1973