Transient hole currents in hydrogenated amorphous silicon at low temperatures and high fields
- 1 March 1993
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 67 (3) , 407-415
- https://doi.org/10.1080/13642819308220141
Abstract
Low-temperature high-field properties of hole transport have been investigated by transient photoconductivity experiments on undoped hydrogenated amorphous silicon. The hole μτproduct at 80K is roughly 7 × 10−10 cm 2 V−1 and the hole mobility 9 × 10−3 cm 2 V−1 s−1 or greater at about 105Vcm−1. The dispersion parameter αD calculated from the slope of the post-transit decay increases from 0 at F< 105Vcm−1 to about 0·4 for F = 2.5 × 105 Vcm−1. The data are discussed in terms of field-stimulated hopping in the valence-band tail and an analytic interpretation of the characteristic current decay is introduced. The data demon-strate the large influence of the field on hole propagation at low temperatures.Keywords
This publication has 18 references indexed in Scilit:
- a-Si:H electron drift mobility measured under extremely high electric fieldPhysical Review B, 1992
- Origin of the low-temperature drift mobility increase in a-Si: HPhilosophical Magazine Part B, 1991
- Theoretical studies of the low-temperature drift mobility in a-Si: HPhilosophical Magazine Part B, 1991
- Transport in a-Si:HJournal of Non-Crystalline Solids, 1991
- Low temperature electronic transport in non-crystalline semiconductorsJournal of Non-Crystalline Solids, 1989
- The extended-state hole mobility in amorphous siliconPhilosophical Magazine Letters, 1988
- The energy distribution of localised states, and the mobilities of free carriers in a-Si:H, from time of flight and other measurementsJournal of Non-Crystalline Solids, 1987
- Determination of the extended-state electron mobility in a-SiPhilosophical Magazine Part B, 1985
- Hopping in Exponential Band TailsPhysical Review Letters, 1985
- Localized states in compensatedPhysical Review B, 1984