"Electrical microscopy" of test parameter inhomogeneities resulting from microdefects in processed silicon wafers
- 1 December 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (12) , 2205-2212
- https://doi.org/10.1109/t-ed.1980.20253
Abstract
Experimental results are presented on reverse current (IR) inhomogeneities in n+-p diode arrays fabricated on wafers selected from dislocation-free Czochralski-grown silicon crystals. The crystals are boron doped with a resistivity of 10 Ω.cm and aKeywords
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