Domain Wall and Domain Structure of Amorphous Multilayered Films
- 1 September 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Translation Journal on Magnetics in Japan
- Vol. 1 (6) , 754-755
- https://doi.org/10.1109/TJMJ.1985.4548940
Abstract
Studies on the effects of nonmagnetic (SiO2) intermediate layers of various thicknesses in amorphous Co-Zr-Nb films are described. Both SiO2 and amorphous Co-Zr-Nb layers were formed by ion beam sputtering, and samples were annealed in rotating and dc magnetic fields to induce a uniaxial anisotropy. Domain wall and structure observations and coercivity measurements both indicated that as the nonmagnetic layer thickness b is increased, a transition from a multilayered to a single-layer film structure occurs at between 10 and 20 Å, while for b ≫ 1000 Å the film loses its multilayered character.Keywords
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