Polarization-independent electroabsorption modulator using strain-compensated InGaAs/lnAIAs MQW stru
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Strained InGaAs/InAlAs MQW electroabsorption modulators with large bandwidth and low driving voltageIEEE Photonics Technology Letters, 1994
- Polarization-Independent Electro-optic Waveguide Switch Using Strained InGaAs/InP Quantum WellsPublished by Optica Publishing Group ,1992
- High-speed and low-driving-voltage InGaAs/InAlAs multiquantum well optical modulatorsElectronics Letters, 1991
- Increased optical saturation intensities in GaInAs multiple quantum wells by the use of AlGaInAs barriersElectronics Letters, 1991