Beam-Induced Annealing of Defects Created by Imlantation at 30 K in Si

• 1 January 1986
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 10-12, 1129-1134
• https://doi.org/10.4028/www.scientific.net/msf.10-12.1129

Abstract