The influence of MBE-layer design on the high frequency performance of Si/SiGe HBTs
- 30 September 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 19 (1-4) , 435-438
- https://doi.org/10.1016/0167-9317(92)90469-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- MBE-grown Si/SiGe HBTs with high beta , f/sub T/, and f/sub max/IEEE Electron Device Letters, 1992
- Parasitic energy barriers in SiGe HBTsIEEE Electron Device Letters, 1991
- Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxyIEEE Electron Device Letters, 1991