Modeling the influence of carrier profiles on MESFET characteristics
- 1 June 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (6) , 1066-1073
- https://doi.org/10.1109/t-ed.1980.19988
Abstract
Continuing development of materials methods and the need to improve MESFET device performance calls for accurate modeling of the effect of free-carrier profiles upon MESFET performance. A computer program known as SATVO is described which provides, by means of a numerical solution, saturation characteristics and gate-electrode capacitances for devices of specified geometry fabricated from layers of any profile which may be specified by either Gaussian expressions (as for ion-implanted layers) or by piecewise-linear descriptions. Examples of the use of this program are also provided.Keywords
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