Boron doped diamond films: Electrical and optical characterization and the effect of compensating nitrogen
- 1 January 1995
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 29 (1-3) , 211-215
- https://doi.org/10.1016/0921-5107(94)04045-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Charge transport in heavily B-doped polycrystalline diamond filmsApplied Physics Letters, 1994
- Electrical conductivity studies of diamond films prepared by electron cyclotron resonance microwave plasmaApplied Physics Letters, 1993
- Effect of boron incorporation on the “quality” of MPCVD diamond filmsDiamond and Related Materials, 1993
- Material and electrical characterization of polycrystalline boron-doped diamond films grown by microwave plasma chemical vapor depositionJournal of Applied Physics, 1991
- Vapor growth of diamond on diamond and other surfacesJournal of Crystal Growth, 1981
- Hopping conduction in semiconducting diamondPhysical Review B, 1978
- The nature of the acceptor centre in semiconducting diamondJournal of Physics C: Solid State Physics, 1971