Binding of Shallow Donor Impurities in Quantum-Well Structures
- 25 March 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 54 (12) , 1283-1286
- https://doi.org/10.1103/physrevlett.54.1283
Abstract
Far-infrared magnetospectroscopy has been carried out on shallow donor impurities doped in the central region of GaAs quantum wells in multiple-quantum-well structures. Quantum-well widths between 80 and 450 Å were investigated. Results are in very good agreement with recent effective-mass calculations for isolated impurities at the center of GaAs quantum wells.
Keywords
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