Calculation of band offsets in strained II–VI heterojunctions
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 101 (1-4) , 372-375
- https://doi.org/10.1016/0022-0248(90)90999-2
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Theoretical calculation of band-edge discontinuities near a strained heterojunction: Application to (In,Ga)As/GaAsPhysical Review B, 1988
- Strained-layer interfaces between II–VI compound semiconductorsJournal of Vacuum Science & Technology B, 1988
- Accuracy of zero-charge and zero-dipole approximations for the determination of valence-band offsets at semiconductor heterojunctionsJournal of Vacuum Science & Technology B, 1988
- Theoretical approach to heterojunction valence-band discontinuities: Case of a common anionPhysical Review B, 1987
- Acoustic deformation potentials and heterostructure band offsets in semiconductorsPhysical Review B, 1987
- Theoretical calculations of semiconductor heterojunction discontinuitiesJournal of Vacuum Science & Technology B, 1986
- Band Lineups at II-VI Heterojunctions: Failure of the Common-Anion RulePhysical Review Letters, 1986
- A Semi-empirical tight-binding theory of the electronic structure of semiconductors†Journal of Physics and Chemistry of Solids, 1983
- Chemical trends for defect energy levels inPhysical Review B, 1982
- Photoelastic trends for amorphous and crystalline solids of differing network dimensionalityPhysical Review B, 1981