Reactive pulsed laser deposition of TiN
- 1 January 1992
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 54, 75-77
- https://doi.org/10.1016/0169-4332(92)90021-o
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- The characterization of titanium nitride by x-ray photoelectron spectroscopy and Rutherford backscatteringJournal of Vacuum Science & Technology A, 1990
- Preparation and characterization of multilayer metallization structures with titanium nitride and titanium silicideThin Solid Films, 1989
- Electrical transport, optical properties, and structure of TiN films synthesized by low-energy ion assisted depositionJournal of Applied Physics, 1988
- Multilayer metallization structures with titanium nitride and titanium silicide prepared by multipulse laser irradiationApplied Physics Letters, 1988
- A correlation of Auger electron spectroscopy, x‐ray photoelectron spectroscopy, and Rutherford backscattering spectrometry measurements on sputter‐deposited titanium nitride thin filmsJournal of Vacuum Science & Technology A, 1986
- Properties and microelectronic applications of thin films of refractory metal nitridesJournal of Vacuum Science & Technology A, 1985
- Mechanisms of reactive sputtering of titanium nitride and titanium carbide I: Influence of process parameters on film compositionThin Solid Films, 1983
- TiN formed by evaporation as a diffusion barrier between Al and SiJournal of Vacuum Science and Technology, 1982
- Chemical Vapor Deposition of Titanium Nitride on Iron in an Ultrasonic FieldJournal of the Electrochemical Society, 1977
- The preparation of hard coatingsThin Solid Films, 1977