I-V Characteristics of oxygen-doped Si epitaxial film (OXSEF)/Si heterojunctions
- 1 October 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 8 (10) , 475-476
- https://doi.org/10.1109/EDL.1987.26699
Abstract
We have fabricated oxygen-doped Si epitaxial film (OX-SEF)/Si heterodiodes to examine device capabilities of the new wide-gap material, OXSEF. Various locations of the p-n junction with respect to the OXSEF/Si interface are achieved by changing the annealing time for arsenic diffusion from the implanted poly-Si layer on top of the OXSEF. When the p-n junction is located at the heterointerface, the diode n-value is 1.4-1.5 after H2annealing. This can be reduced to 1.1-1.2 by pushing the p-n junction into a Si substrate of about 600 Å.Keywords
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