Generalized Epstein model of stripe-geometry injection lasers

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Abstract
A new rich family of complex permittivity profiles is obtained by introduction of additional parameters in the Burman and Gould procedure of generating the generalized Epstein profile. As an example of its possible applications, a model of planar-stripe injection lasers is developed. By proper choice of parameters the permittivity profile along the junction plane can be varied in its central part without affecting its tails. Effects of interaction between the optical field and the charge carriers inside the stripe can thus be modeled. An analytical solution of the wave equation is given, and a number of examples of the near-field pattern for the fundamental lateral mode are calculated for (AlGa)As lasers by a self-consistent iterative technique. The influence of asymmetry of the permittivity on near-field shifts is demonstrated.

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