Epitaxial growth of BP compounds on Si substrates using the B2H6-PH3-H2 system
- 10 October 1974
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 24-25, 193-196
- https://doi.org/10.1016/0022-0248(74)90303-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Hetero-Epitaxial Growth of Lower Boron Phosphide on Silicon Substrate Using PH3-B2H6-H2SystemJapanese Journal of Applied Physics, 1973
- Vapor growth of boron monophosphide using open and closed tube processesJournal of Crystal Growth, 1972
- Crystals and Epitaxial Layers of Boron PhosphideJournal of Applied Physics, 1971
- Optical Absorption, Electroluminescence, and the Band Gap of BPPhysical Review Letters, 1964
- Unit cell, space group and composition of a lower boron phosphideActa Crystallographica, 1961