Electrical Properties of Near-Degenerate Boron-Doped Silicon

Measurements of extrinsic resistivity and Hall effect have been carried out for a group of single crystals of silicon containing a wide range of boron concentration, with particular stress on samples in the near-degenerate range, ${10}^{18}$ to ${10}^{19}$ boron atoms per ${\mathrm{cm}}^3$. The anomalous Hall mobility effect previously observed by Morin and Maita in silicon was studied in finer detail over the temperature range 25°K to 300°K. For degenerate samples the 300°K Hall mobility is approximately 46 ${\mathrm{cm}}^2$/volt sec.