A Study on Electrical Properties of P-Type ZnTe Showing Injection Electroluminescence

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Abstract
Currents considerably in excess of those predicted by Ohm's law can be drawn through p-type ZnTe showing injection electroluminescence when sufficiently large voltages are applied. These currents can be explained by Lampert theory of one carrier space-charge-limited currents in a semi-insulating layer involved. By a capacitance measurement with reverse bias voltage the semi-insulating layer is found to be usually 1 µm in thickness. Values of depths and densities for hole traps which can be determined from the analysis of the dependence of the space-charge-limited currents on applied voltage in this layer are 0.13∼0.17 eV and 1016∼1017 cm-3, respectively. Both electrical and optical properties are in accord with a band model having a metal (indium)-semi-insulator (indium+ZnTe)-semiconductor (ZnTe) structure.

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