The effect of beam current and dose on the formation of buried silicon nitride layers by nitrogen implantation with a stationary beam
- 1 April 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 22 (4) , 513-519
- https://doi.org/10.1016/0168-583x(87)90152-2
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- A study of buried silicon nitride layers formed by nitrogen implantation with a stationary beamNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Transmission electron microscopy and Auger electron spectroscopy of silicon-on-insulator structures prepared by high-dose implantation of nitrogenJournal of Applied Physics, 1985
- Formation of Silicon‐on‐Insulator Structures by Implanted NitrogenJournal of the Electrochemical Society, 1985
- High quality silicon on insulator structures formed by the thermal redistribution of implanted nitrogenApplied Physics Letters, 1985
- Silicon-on-insulator by oxygen implantation with a stationary beamApplied Physics Letters, 1985
- Silicon on insulator structures formed by the implantation of high doses of reactive ionsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- The formation of buried Si3N4 layers in silicon by high dose nitrogen ion implantationThin Solid Films, 1983
- Study of buried silicon nitride layers synthesized by ion implantationJournal of Applied Physics, 1980
- Formation of silicon nitride compound layers by high-dose nitrogen implantationJournal of Applied Physics, 1980
- Epitaxial silicon layers grown on ion-implanted silicon nitride layersApplied Physics Letters, 1973