Structure of the Impurity Band and Magnetic‐Field‐Induced Metal‐Non‐Metal Transition in n‐Type InSb
- 1 July 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 70 (1) , 81-90
- https://doi.org/10.1002/pssb.2220700107
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Etude de la structure électronique de de l'antimoniure d'indium de type n par une méthode de battement hyperfréquencePhysica Status Solidi (b), 1972
- Localization of Electrons in Impure Semiconductors by a Magnetic FieldReviews of Modern Physics, 1968
- Magnetically Induced Spin-Reversal Transitions in Impurity Hop Conduction in-Type GermaniumPhysical Review B, 1968
- Magnetic-Field-Induced Mott Transition in SemiconductorsPhysical Review B, 1967
- Magnetoresistance of-Type Germanium in the Phonon-Assisted Hopping Conduction Range at High Magnetic FieldsPhysical Review B, 1966
- Electron correlations in narrow energy bands. II. The degenerate band caseProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1964
- Impurity Conduction at Low ConcentrationsPhysical Review B, 1960
- Impurity Photoconductivity in n-type InSbProceedings of the Physical Society, 1960
- Effect of Neutral Impurity on the Microwave Conductivity and Dielectric Constant of Germanium at Low TemperaturesPhysical Review B, 1956
- Electrical Properties of-Type Indium Antimonide at Low TemperaturesPhysical Review B, 1955