Electromigration performance of electroless plated copper/Pd-silicide metallization
- 1 August 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (8) , 433-435
- https://doi.org/10.1109/55.192782
Abstract
The electromigration reliability of Cu interconnects has been studied under DC, pulse-DC, and bipolar current stressing conditions. Electroless plating was used to selectively deposit Cu in oxide trenches by using Pd silicide as a catalytic layer at the bottom of the trenches to initiate copper deposition. The DC and pulse-DC lifetimes of Cu are found to be about two orders of magnitude longer than that of Al-2%Si at 275 degrees C, and about four orders of magnitude longer than that of Al-2%Si when extrapolated to room temperature. On the other hand, Cu AC lifetimes are found to be comparable to the AC lifetimes of Al-2%Si. The pulse-DC lifetime of copper interconnects follows the similar frequency and duty factor dependence as aluminium and the prediction of the vacancy relaxation model.<>Keywords
This publication has 3 references indexed in Scilit:
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