The Effectiveness of Ta Prepared by Ion‐Assisted Deposition as a Diffusion Barrier Between Copper and Silicon
- 1 May 1997
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 144 (5) , 1807-1812
- https://doi.org/10.1149/1.1837684
Abstract
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