Novel Temperature-Dependent Junction Characteristics of Poly(3-alkylthiophene) Schottky Diodes
- 1 May 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (5A) , L837
- https://doi.org/10.1143/jjap.29.l837
Abstract
Electrical characteristics of poly(3-alkylthiophene) and metal interfaces have been studied. Good Schottky type diodes have been fabricated using aluminum and gold-tin electrodes vacuum-evaporated onto poly(3-alkylthiophene) films. Markedly large temperature dependences are observed for poly(3-alkylthio-phene) Schottky diodes and discussed in terms of a temperature-dependent electronic band scheme.Keywords
This publication has 10 references indexed in Scilit:
- A photoelectron emission study of polythiophene derivativesJournal of Physics: Condensed Matter, 1989
- Dependence of Absorption Spectra and Solubility of Poly(3-alkylthiophene) on Molecular Structure of SolventJapanese Journal of Applied Physics, 1988
- Thermochromism, Photochromism and Anomalous Temperature Dependence of Luminescence in Poly(3-Alkylthiophene) FilmJapanese Journal of Applied Physics, 1988
- Spectral Change of Polymer Film Containing Poly(3-Alkylthiophene) with Temperature and Its Application as Optical Recording MediaJapanese Journal of Applied Physics, 1988
- Fusibility of Polythiophene Derivatives with Substituted Long Alkyl Chain and Their PropertiesJapanese Journal of Applied Physics, 1987
- Macromolecular electronic device: Field-effect transistor with a polythiophene thin filmApplied Physics Letters, 1986
- Characteristics of Heterojunction Consisting of Conducting Polymers of Polythiophene and PolypyrroleJapanese Journal of Applied Physics, 1985
- Preparation and Properties of Conducting Heterocyclic Polymer Films by Chemical MethodJapanese Journal of Applied Physics, 1984
- Electron velocity in Si and GaAs at very high electric fieldsApplied Physics Letters, 1980
- Phototransport effects in polyacetylene, (CH)xSolid State Communications, 1980