Controlled Zn diffusion for low threshold narrow stripe GaAlAs/GaAs DH lasers

1 September 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 2 (9) , 225-227
https://doi.org/10.1109/EDL.1981.25412

Abstract

Zn diffusion was accurately controlled to reach within the active region of a GaAlAs/GaAs DH laser. The diffused 4 µm stripe lasers have threshold currents as low as 40 mA and exhibit single longitudinal mode oscillation in a wide range of current levels.

Keywords

OPTICAL CONTROL
ZINC
GALLIUM ARSENIDE
DH-HEMTS
OPTICAL WAVEGUIDES
LASER MODES
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
DIFFUSION PROCESSES
WAVEGUIDE LASERS

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