Abstract
For pt.II see ibid., vol.2, p.2687 (1990). A model calculation is attempted for the electrical resistivity and the electronic density of states of liquid and amorphous metals using the muffin-tin EMA formalism developed by the present authors. A single s-phase shift model is adopted here with different scattering strengths. It is found that the short- and the medium-range order in the atomic structure causes a deep minimum in the electronic density of states and, furthermore, a very sharp rise of the resistivity when the Fermi energy approaches the minimum. It causes in turn a strong temperature dependence of resistivity for strong scattering cases through the temperature dependence of the Fermi-Dirac distribution function. The temperature dependence also comes from the structure factor, and both effects support the Mooij correlation between the resistivity and the temperature coefficient of resistivity.