Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy
- 19 April 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (16) , 2358-2360
- https://doi.org/10.1063/1.123850
Abstract
Low-temperature (1.7–20 K) photoluminescence and reflectance are used to investigate the free and bound exciton and shallow impurity states in GaN. A 300-μm-thick GaN layer grown by hydride vapor phase epitaxy on sapphire(0001), with an exceptionally low dislocation density (3×106 cm−2) is used to obtain very high quality spectra. Both free and bound n=2 excitons are identified, leading to a confirmation of the A free exciton binding energy as about 26.4 meV, independent of strain. Principal neutral donor-bound exciton (D0,X) peaks involving two to three different donors are resolved, as are two-electron satellites involving up to five different residual donors with binding energies ranging from 22 to 34.5 meV.Keywords
This publication has 11 references indexed in Scilit:
- Determination of valence band splitting parameters in GaNJournal of Applied Physics, 1998
- Exciton and donor - acceptor recombination in undoped GaN on Si(111)Semiconductor Science and Technology, 1997
- Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxyJournal of Applied Physics, 1996
- Exciton fine structure in undoped GaN epitaxial filmsPhysical Review B, 1996
- Free and bound excitons in thin wurtzite GaN layers on sapphireSemiconductor Science and Technology, 1996
- Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substratesSolid State Communications, 1996
- Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxyMRS Internet Journal of Nitride Semiconductor Research, 1996
- Near-gap energy levels of InP-luminescence and photoconductivity studyJournal of Physics C: Solid State Physics, 1982
- Excitons bound to neutral donors in InPPhysical Review B, 1978
- Exciton Structure and Zeeman Effects in Cadmium SelenidePhysical Review B, 1962