Concentration profiles of implanted boron ions in silicon from measurements with the ion microprobe
- 16 June 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 17 (2) , 653-658
- https://doi.org/10.1002/pssa.2210170232
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Diffusion of Boron from Shallow Ion Implants in SiliconJournal of the Electrochemical Society, 1972
- The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into SiliconJournal of the Electrochemical Society, 1971
- Doped Oxides as Diffusion SourcesJournal of the Electrochemical Society, 1969
- Diffusion of Boron into SiliconJournal of Applied Physics, 1960