Charged Excitons in Self-Assembled Semiconductor Quantum Dots
- 29 December 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 79 (26) , 5282-5285
- https://doi.org/10.1103/physrevlett.79.5282
Abstract
Interband excitations of an ensemble of InAs self-assembled quantum dots have been directly observed in transmission experiments. The dots are embedded in a field-effect structure allowing us to load the dots electrically. We establish an exact correspondence between Coulomb blockade in the device's vertical transport properties and Pauli blocking in the transmission spectra. We observe substantial shifts, up to 20 meV, in the energies of the higher excitations on occupation of the electron ground state. We argue that this is a consequence of an exciton-electron interaction.Keywords
This publication has 17 references indexed in Scilit:
- Few-electron ground states of charge-tunable self-assembled quantum dotsPhysical Review B, 1997
- Shell structure and electron-electron interaction in self-assembled InAs quantum dotsEurophysics Letters, 1996
- Electronic structure and magneto-optics of self-assembled quantum dotsPhysical Review B, 1996
- Binding energies of excitons and charged excitons in quantum dotsSolid State Communications, 1996
- Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dotsApplied Physics Letters, 1996
- Phonons and radiative recombination in self-assembled quantum dotsPhysical Review B, 1995
- Quantum many-body states of excitons in a small quantum dotPhysical Review B, 1995
- Ultranarrow Luminescence Lines from Single Quantum DotsPhysical Review Letters, 1995
- Spectroscopy of Quantum Levels in Charge-Tunable InGaAs Quantum DotsPhysical Review Letters, 1994
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994