Characterization of an MOS sense amplifier
- 1 April 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 13 (2) , 268-271
- https://doi.org/10.1109/JSSC.1978.1051032
Abstract
A novel technique to characterize MOS sense amplifiers is described. The technique does not perturb the operation of the sense amplifier during characterization. An MOS sense amplifier has been characterized using this technique for various power supply and clock conditions. The characterization results are given to demonstrate the sensitivity of the technique.Keywords
This publication has 2 references indexed in Scilit:
- A byte organized NMOS/CCD memory with dynamic refresh logicIEEE Journal of Solid-State Circuits, 1976
- A sense amplifier for a low clock capacitance 16K CCD memoryPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1976