Effect of the silicon/oxide interface on interstitials: Di-interstitial recombination
- 1 October 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (7) , 3555-3560
- https://doi.org/10.1063/1.368530
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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