A high temperature GaP MESFET
- 1 November 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 3 (11) , 344-346
- https://doi.org/10.1109/EDL.1982.25595
Abstract
GaP MESFET's have been fabricated for the first time and the resulting devices are functional at temperatures of up to 295°C. The devices fabricated haveW/L = 25/1and demonstrate a tranconductance of 200 µS. This value of transconductance is within 5% of the predicted value.Keywords
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