Hot Electron Injection Characteristics in Asymmetrically Structured Submicron MOSFETs
- 1 January 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (1A) , L21-23
- https://doi.org/10.1143/jjap.28.l21
Abstract
Gate current and substrate current characteristics of submicron NMOSFET with asymmetrical lightly doped drain (LDD) structures are studied. It is newly found that the gate current also has a double-hump phenomenon, as does the substrate current. This new phenomenon can be estimated from impact ionization and the hot-electron emission mechanism. Furthermore, it is newly clarified that the threshold voltage shift after DC stress can be well explained by the gate current over the whole range of stress conditions.Keywords
This publication has 2 references indexed in Scilit:
- Asymmetrical characteristics in LDD and minimum-overlap MOSFET'sIEEE Electron Device Letters, 1986
- Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistorIEEE Transactions on Electron Devices, 1980