Morphological and electrical properties of rf sputtered Y2O3-doped ZrO2 thin films

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Abstract
The structural, compositional, and electrical properties of rf sputter-deposited Y2O3-doped ZrO2 films have been investigated as a function of sputtering conditions. The results show that the application of an rf substrate bias during deposition has a large effect on both the morphological and electrical properties of the films. Auger electron spectroscopy, electron diffraction, and scanning-electron-fractography results show that films deposited at P=20 mTorr (2.67 Pa), VT=−500 V, and VS=−40 V are nearly stoichiometric, have a cubic crystal structure, and a relatively equiaxed microstructure. The results of electrical measurements indicate that films grown under these sputtering conditions have an ionic transference number which is nearly zero below 100 °C and rises to approximately 0.4 at 200 °C.

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