Localisation of defects on SOI films via selective recrystallisation using halogen lamps

23 June 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (13) , 464-466
https://doi.org/10.1049/el:19830316

Abstract

Selective annealing by means of an incoherent light system has been employed to grow single-crystal Si on oxide. This technique allows control of the location of the remaining defects (subgrain boundaries) in the recrystallised film.

Keywords

ELEMENTAL SEMICONDUCTORS
INCOHERENT LIGHT SYSTEM
HALOGEN LAMPS
SELECTIVE ANNEALING
SINGLE-CRYSTAL SI ON OXIDE
(100) RECRYSTALLISED FILM
SUBGRAIN BOUNDARIES
SEMICONDUCTOR GROWTH
DEFECT LOCALISATION
SELECTIVE RECRYSTALLISATION
SOI FILMS
SIO2

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