Piezoresistive Properties of Boron-Doped PECVD Micro- and Polycrystalline Silicon films
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Annealing-related electrical and piezoresistive properties of Band As-implanted LPCVD silicon filmsJournal de Physique III, 1993
- A Particular Structure of B-doped μc-Si/a-Si:H Layers on InsulatorMRS Proceedings, 1992
- Polycrystalline Si under strain: Elastic and lattice-dynamical considerationsJournal of Applied Physics, 1987
- Piezoresistive Properties of Boron-Doped PECVD Microcrystalline Silicon FilmsMRS Proceedings, 1987
- Microcrystalline silicon thin films for sensor applicationsSensors and Actuators, 1985
- Piezoresistance in polysiliconElectronics Letters, 1984
- A graphical representation of the piezoresistance coefficients in siliconIEEE Transactions on Electron Devices, 1982
- Modeling and optimization of monolithic polycrystalline silicon resistorsIEEE Transactions on Electron Devices, 1981
- Effect of static uniaxial stress on the Raman spectrum of siliconSolid State Communications, 1970
- The Elastic Behaviour of a Crystalline AggregateProceedings of the Physical Society. Section A, 1952