Electronic states of silicon in Ni-silicides by nuclear magnetic resonance
- 1 February 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 33 (8) , 899-901
- https://doi.org/10.1016/0038-1098(80)91213-2
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Chemical effect in (LVV) Auger spectra of third-period elements (Al, Si, P, and S) dissolved in copperApplied Physics Letters, 1979
- A Calculation of the Electronic Structure of an Impurity Atom of Non-Transition Element in CopperJournal of the Physics Society Japan, 1976
- Electronic structure of Al and Si dissolved in transition or noble metals studied by soft x-ray spectroscopyApplied Physics Letters, 1975
- Metallic superconducting Si and Ge produced by vapor quenching on CuApplied Physics Letters, 1975
- Chemical Bonding and Structure of Metal-Semiconductor InterfacesPhysical Review Letters, 1975
- Metallic state of Si in Si−noble−metal vapor−quenched alloys studied by Auger electron spectroscopyApplied Physics Letters, 1975
- NMR Study on Heavily Doped Silicon. IJournal of the Physics Society Japan, 1974
- Nuclear Magnetic Resonance of V in PdV and Sc in PdSc and PtSc –Experiment and Theory–Journal of the Physics Society Japan, 1974
- Supraleitung von germanium und silizium unter hohem druckPhysics Letters, 1965
- Pressure induced phase transitions in silicon, germanium and some III–V compoundsJournal of Physics and Chemistry of Solids, 1962