Introduction
- 1 January 1977
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- FABRY-PEROT STRUCTURE AlxGa1−xAs INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLD CURRENT DENSITIES OF 2530 A/cm2Applied Physics Letters, 1970
- JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATUREApplied Physics Letters, 1970
- Evidence for the role of certain metallurgical flaws in accelerating electroluminescent diode degradationMetallurgical Transactions, 1970
- A low-threshold room-temperature injection laserIEEE Journal of Quantum Electronics, 1969
- Physical basis of noncatastrophic degradation in GaAs injection lasersProceedings of the IEEE, 1969
- Catastrophic Degradation in GaAs Injection LasersJournal of Applied Physics, 1967
- A proposed class of hetero-junction injection lasersProceedings of the IEEE, 1963
- SEMICONDUCTOR MASER OF GaAsApplied Physics Letters, 1962
- Coherent Light Emission From GaAs JunctionsPhysical Review Letters, 1962
- Magnetisierungskurve eines einachsigen ferromagnetischen einkristalls im axialen magnetfeldPhysics Letters, 1962