Measurement of minority carrier lifetime during gradual degradation of GaAs-Ga1-xAlxAs double- heterostructure lasers
- 1 January 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 10 (1) , 81-84
- https://doi.org/10.1109/jqe.1974.1068083
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Mesa-stripe-geometry double-heterostructure injection lasersIEEE Journal of Quantum Electronics, 1973
- Injected Carrier Lifetime and Aging of GaAs Injection LasersJournal of Applied Physics, 1971
- GaAs–GaxAl1−xAs Heterostructure Injection Lasers which Exhibit Low Thresholds at Room TemperatureJournal of Applied Physics, 1970
- Physical basis of noncatastrophic degradation in GaAs injection lasersProceedings of the IEEE, 1969
- Dynamics of injection lasersIEEE Journal of Quantum Electronics, 1968
- DELAY BETWEEN CURRENT PULSE AND LIGHT EMISSION OF A GALLIUM ARSENIDE INJECTION LASERApplied Physics Letters, 1964