A combined electron and ion beam lithography system

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Abstract
In scanning beam microfabrication processes, including resist exposure, direct maskless ion implantation, and micromachining, ions and electrons have complementary roles. It is advantageous to have, within a single scanning beam machine, finely focused and precisely coregistered beams of both ions and electrons. The requirement for the ion beam and the electron beam to have a common axis and to be focused at the target by a high resolution lens with short working distance can be met both by solely electrostatic and by combined magnetic and electrostatic lenses. Such lenses, and complete probe-forming systems incorporating them, are considered.

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