InGaSbAs injection lasers
- 1 June 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 23 (6) , 1089-1094
- https://doi.org/10.1109/jqe.1987.1073467
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Room-temperature GaInAsSb/AlGaAsSb DH injection lasers at 2.2 μmElectronics Letters, 1985
- Room Temperature Operation of the InGaAsSb/AlGaAsSb DH Laser at 1.8 µm WavelengthJapanese Journal of Applied Physics, 1980
- Beamwidth approximations for the fundamental mode in symmetric double-heterojunction lasersIEEE Journal of Quantum Electronics, 1978
- Injection heterolaser based on InGaAsSb four-component solid solutionSoviet Journal of Quantum Electronics, 1978
- Multicomponent semiconductor solid solutions and their laser applications (review)Soviet Journal of Quantum Electronics, 1976