Chemical etching of Si(111)-(7×7) and Al/Si(111) by atomic hydrogen
- 1 March 1991
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 9 (2) , 228-231
- https://doi.org/10.1116/1.577526
Abstract
We have observed an etching reaction on the Al/Si(111) surface (θAl≥1) induced by the chemisorption of atomic hydrogen at low temperature (T=250–400 K). The major silicon containing product detected by temperature programmed desorption (TPD) is silane (SiH4). An approximate sixfold increase in silane production is observed in the presence of aluminum, with a decrease in the TPD peak temperature from 645 K on Si(111) to 335 K on Al/Si(111). A kinetic model is presented to explain this catalyzed etching reaction.Keywords
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