Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers
- 1 July 2000
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 44 (7) , 1157-1161
- https://doi.org/10.1016/s0038-1101(00)00059-9
Abstract
No abstract availableKeywords
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