Performance of Ge-on-Si p-i-n Photodetectors for Standard Receiver Modules
- 13 November 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 18 (23) , 2442-2444
- https://doi.org/10.1109/lpt.2006.885623
Abstract
Ge on Si p-i-n photodetectors with areas which are compatible with commercially available receivers have been fabricated and tested. A dark current density of 6 mA/cm2 at -1-V bias has been measured at room temperature; when heated to 85 degC, the measured dark current increases by a factor of nine. A responsivity of 0.59 A/W at 850 nm has been measured from these Ge detectors, which matches or exceeds commercially available GaAs devices. We have measured bandwidths approaching 9 GHz at -2-V bias from 50-mum diameter Ge detectors, and have observed eye diagrams comparable to those obtained from GaAs-based receivers at 4.25 Gb/sKeywords
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